Effect of fluorine substitution on naphtho[2,1-b:3,4-b′]bis[1]-benzothiophene-derived semiconductors for transistor application
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- 作者：Zhaoguang Lia ; 1 ; Ji Zhangb ; 1 ; Weifeng Zhangb ; Lei Guoa ; Jianyao Huangb ; Gui Yub ; yugui@iccas.ac.cn" class="auth_mail" title="E-mail the corresponding author ; Man Shing Wonga ; mswong@hkbu.edu.hk" class="auth_mail" title="E-mail the corresponding author
- 关键词：Organic field-effect transistor ; Organic semiconductor ; Thienoacene ; Fluorine substitution ; Hole mobility
- 刊名：Organic Electronics
- 出版年：2016
- 出版时间：May 2016
- 年：2016
- 卷：32
- 期：Complete
- 页码：47-53
- 全文大小：1934 K
文摘
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High thermal stability and low-lying HOMO energy level of NBBTF-n series afforded air-stable OFET devices.
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NBBTF-10 showed a hole mobility up to 0.35 cm2 V−1 s−1 with Ion/off up to 107.
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The effect of fluorine substitution on the close molecular stacking was well confirmed by AFM and XRD measurements.