Valence Band Edge Shifts and Charge-transfer Dynamics in Li-Doped NiO Based p-type DSSCs
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- 作者：Lifang Weia ; Linpeng Jianga ; Shuai Yuana ; Xin Rena ; Yin Zhaoa ; zhaoyinsunny@163.com" class="auth_mail" title="E-mail the corresponding author ; Zhuyi Wanga ; Meihong Zhanga ; Liyi Shia ; ; Dongdong Lib
- 关键词：Li-doped NiO photoelectrode ; interfacial ; photoelectrochemical ; p-type DSSCs
- 刊名：Electrochimica Acta
- 出版年：2016
- 出版时间：10 January 2016
- 年：2016
- 卷：188
- 期：Complete
- 页码：309-316
- 全文大小：1401 K
文摘
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Li-doped NiO photoelectrodes show down-shift of valance band and narrowing trap energy distribution.
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Pure and Li doped NiO photoelectrodes exhibit different order in the hole lifetimes under dark and illumination.
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Li doping exhibits markedly inhibit recombination with reduced state of dye and increase hole lifetimes under illumination.