Impact of within-wafer process variability on radiation response

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• 作者：Zhiyuan Hu^a ; ^b ; ^{zhiyuan.hu@gracesemi.com"" rel=""nofollow} ; Zhangli Liu^a ; ^b ; Hua Shao^b ; Zhengxuan Zhang^a ; Bingxu Ning^a ; ^b ; Ming Chen^a ; ^b ; Dawei Bi^a ; ^b ; Shichang Zou^a
• 关键词：CMOS devices ; Ionizing radiation ; STI ; Total dose effects
• 刊名：Microelectronics Journal
• 出版年：2011
• 出版时间：June 2011
• 年：2011
• 卷：42
• 期：6
• 页码：883-888
• 全文大小：895 K

文摘

The impact of sample-to-sample variability on total ionizing dose (TID) response within-wafer for a 180-nm CMOS technology has been studied. Large variations in leakage current and threshold voltage shift after irradiation are observed. These variations are mainly contributed to the process variability. The process steps which cause TID response variation are preliminarily discussed.