Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology

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• 作者：Bingxu Ning ; ^{ningbx@mail.sim.ac.cn} ; Zhengxuan Zhang ; Zhangli Liu ; Zhiyuan Hu ; Ming Chen ; Dawei Bi ; Shichang Zou
• 刊名：Microelectronics Reliability
• 出版年：2012
• 出版时间：January 2012
• 年：2012
• 卷：52
• 期：1
• 页码：130-136
• 全文大小：439 K

文摘

The effects of total ionizing dose (TID) irradiation on the inter-device and intra-device leakage current in a 180-nm flash memory technology are investigated. The positive oxide trapped charge in the shallow trench isolation (STI) oxide is responsible for the punch-through leakage increase and punch-through voltage decrease. Nonuniform radiation-induced oxide trapped charge distribution along the STI sidewall is introduced to analyze the radiation responses of input/output (I/O) device and high voltage (HV) device. At low dose level, the inversion near the STI corner caused by the trapped charge occurs more easily due to the lower doping concentration in this region, which gives rise to the subthreshold hump effect. With total dose level increase, more charge at deep region of the STI oxide is accumulated, predominating the intra-device off-state leakage current. It has been discussed that the STI corner scheme and substrate doping profile play important roles on influencing the device¡¯s performance after radiation.