A red europium (III) ternary complex for InGaN-based light-emitting diode

详细信息    查看全文

• 作者：Zhengliang Wang ; Nengjun Xiang ; Qin Wang ; Guangqiu Zhang ; Menglian Gong
• 关键词：Europium (III) ternary complex ; Thermogravimetric analysis ; Chemical synthesis ; Luminescence ; Light-emitting diode
• 刊名：Journal of Luminescence
• 出版年：2010
• 出版时间：January 2010
• 年：2010
• 卷：130
• 期：1
• 页码：35-37
• 全文大小：204 K

文摘

One kind of europium (III) ternary complex was synthesized, and its photoluminescence properties were investigated. This complex exhibits broad excitation band in near-UV range, and strong red emission which is due to the ⁵D₀–⁷F_j transitions of Eu³⁺ ions. The luminescence quantum yield for the Eu³⁺ complex is 0.17. Thermogravimetric analysis confirms a high thermal stability of the complex with a decomposition temperature of 344 °C. All the characteristics indicate that the Eu³⁺ complex is a highly efficient red phosphor suitable to be excited by near UV light. An intense red light-emitting diode was fabricated by combining the europium (III) ternary complex with a ~395 nm-emitting InGaN chip.