New red phosphor for near-ultraviolet light-emitting diodes with high color-purity

详细信息    查看全文

• 作者：Zhengliang Wang ; Pei He ; Rui Wang ; Jishou Zhao ; Menglian Gong
• 关键词：A. Inorganic compounds ; C. X-ray diffraction ; D. Luminescence ; D. Optical properties
• 刊名：Materials Research Bulletin
• 出版年：2010
• 出版时间：February 2010
• 年：2010
• 卷：45
• 期：2
• 页码：240-242
• 全文大小：341 K

文摘

New red phosphors, Na₅Eu(MoO₄)₄ doped with boron oxide were prepared by the solid-state reaction. Their structure and photo-luminescent properties were investigated. With the introduction of boron oxide, the red emission intensity of the phosphors under 395 nm excitation is strengthened, with high color-purity (x = 0.673, y = 0.327). The single red light-emitting diode was obtained by combining InGaN chip with the red phosphor, bright red light can be observed by naked eyes from the red light-emitting diodes under a forward bias of 20 mA.