State of strain in GaN material as derived by optical feedback measurement

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• 作者：Wenxue Chen ; ^{200231030072@whu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; ^{cwx208@nudt.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Xinhan Hu ; Zhibin Ni ; Tieqiang Han ; Xiaofeng Lu
• 关键词：GaN ; Strain ; Optical feedback ; Interference
• 刊名：Optik - International Journal for Light and Electron Optics
• 出版年：2016
• 出版时间：April 2016
• 年：2016
• 卷：127
• 期：8
• 页码：3976-3978
• 全文大小：439 K

文摘

Strain in gallium nitride (GaN) leads to serious problems, such as cracks, dislocation and wafer bending. Therefore, the strain magnitude and distribution in GaN is important to understand. In this paper, we describe the state of strain in GaN materials as derived by the optical feedback technology. The tiny strain of GaN materials, including the strain distribution, is measured by using the optical feedback approach, which makes it possible to detect whether the GaN tested meets its strain requirements.