Effects of 120 keV nitrogen and its fluence on the structural, electrical, and optical properties of ZnO film

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• 作者：Kun Wang ; Zhibo Ding ; Tianxiang Chen ; Di Chen ; Shude Yao ; Zhuxi Fu
• 关键词：ZnO ; N-implantation ; p-type ; Second phase ; Luminescence
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2008
• 出版时间：June 2008
• 年：2008
• 卷：266
• 期：12-13
• 页码：2962-2965
• 全文大小：155 K

文摘

P-type ZnO film was obtained by N-implantation at energy of 120 keV with annealing at 850 °C in oxygen. Room temperature Hall effect measurements revealed that the carrier concentration and mobility was 9.95 × 10¹⁸ cm⁻³ and 14.3 cm²/vs, respectively, in the implanted ZnO with optimal fluence of 10¹⁵ N/cm², where more N acceptors were activated as confirmed by X-ray diffraction and photoluminescence. The increase of lattice constants and appearance of emission peaks at 3.26 and 3.18 eV after implantation indicated that the p-type ZnO was realized by substitution of N atom for O sublattice.