Thermal conductivity measurement of the He-ion implanted layer of W using transient thermoreflectance technique

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• 作者：Shilian Qu^a ; Yuanfei Li^a ; Zhigang Wang^b ; Yuzhen Jia^a ; ^e ; Chun Li^c ; Ben Xu^a ; Wanqi Chen^a ; Suyuan Bai^d ; Zhengxing Huang^b ; Zhenan Tang^b ; Wei Liu^a ; ^{liuw@mail.tsinghua.edu.cn}
• 刊名：Journal of Nuclear Materials
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：484
• 期：Complete
• 页码：382-385
• 全文大小：1099 K
• 卷排序：484

文摘

Transient thermoreflectance method was applied on the thermal conductivity measurement of the surface damaged layer of He-implanted tungsten. Uniform damages tungsten surface layer was produced by multi-energy He-ion implantation with thickness of 450 nm. Result shows that the thermal conductivity is reduced by 90%. This technique was further applied on sample with holes on the surface, which was produced by the He-implanted at 2953 K. The thermal conductivity decreases to 3% from the bulk value.