Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors

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• 作者：Peng Cui^a ; Huan Liu^b ; Zhaojun Lin^a ; ^{linzj@sdu.edu.cn} ; Aijie Cheng^b ; Yan Liu^a ; Chen Fu^a ; Yuanjie Lv^c ; Zhihong Feng^c ; Chongbiao Luan^d
• 关键词：AlGaN/GaN HFETs ; Cap layer thickness ; Polarization Coulomb field scattering
• 刊名：Superlattices and Microstructures
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：100
• 期：Complete
• 页码：358-364
• 全文大小：1021 K
• 卷排序：100

文摘

The GaN cap layer can influence the electron mobility in AlN/GaN HFETs. This influence was determined by experiment and theoretical calculation. The thick cap layer can weaken PCF scattering and improve the electron mobility.