Transient electron population and optical properties in a semiconductor quantum well

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• 作者：Zhiping Wang  ; ;   ; ^{zhipwang@126.com} ; Benli Yu ; Xuqiang Wu ; Shenglai Zhen ; Zhigang Cao ; Jun Zhu
• 关键词：Semiconductor quantum well ; Electron population ; Optical transient properties
• 刊名：Superlattices and Microstructures
• 出版年：2011
• 出版时间：December 2011
• 年：2011
• 卷：50
• 期：6
• 页码：734-742
• 全文大小：433 K

文摘

We investigate the transient behaviors of the dispersion and the absorption in a three-level GaAs/AlGaAs semiconductor quantum well system. It is found that the Fano interference and the energy splitting affect the transient behaviors dramatically, which can be used to manipulate efficiently the gain-absorption coefficient and group velocity of the probe field. The dependence of transient electron population on the Fano interference and the energy splitting is also discussed.