Effect of a ZnO buffer layer on the properties of epitaxial ZnO:Ga films deposited on c-sapphire substrate
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- 作者：Zhiyun Zhanga ; zhangzhiyun01@163.com" class="auth_mail ; Chonggao Baob ; Dawei Yia ; Bo Yangc ; Qun Lib ; Shuzeng Houb ; Z.H. Hand
- 关键词：HRTEM ; AZO ; GZO ; Bi-layer film ; Stacking faults ; Defect density
- 刊名：Journal of Alloys and Compounds
- 出版年：5 September 2014
- 年：2014
- 卷：606
- 期：Complete
- 页码：208-213
- 全文大小：1753 K
文摘
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The lowest resistivity of 1.2 × 10–4 惟 cm was obtained at a ZnO buffered substrate.
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The characteristic of c-axis oriented texture grows up at different substrates.
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Two kinds of stacking faults were observed at Fourier-filtered images.
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Origin and consequences of stacking faults were discussed.
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Lower defect density of film has a benefit effect on the resistivity.