The preferential formation site of dislocations in InAs/GaAs quantum dots

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• 作者：Shuai Zhou ; Yumin Liu ; ^{liuyuminhqy@263.net} ; Donglin Wang ; Xia Xin ; Gui Cao ; Pengfei Lu ; Zhongyuan Yu
• 关键词：InAs/GaAs quantum dots ; Dislocation ; Position dependent ; Aspect ratio
• 刊名：Superlattices and Microstructures
• 出版年：2012
• 出版时间：January 2012
• 年：2012
• 卷：51
• 期：1
• 页码：53-61
• 全文大小：627 K

文摘

In this paper, taking elastic anisotropy into consideration, we use a dislocation position dependent model to calculate the preferential formation site of the pure edge and 60¡ã mixed dislocation segment in different shaped InAs/GaAs quantum dots (QDs). From the result, it is clear that for the pure edge dislocations the most energy favorable position is always the base center of the quantum dots. While as to the 60¡ã mixed dislocations, the positions near to the edge of the quantum dot base are the energy favorable area and the exact position is changed with different aspect ratio of the quantum dot.