Surface morphology and optical properties of InGaN/GaN multiple quantum wells grown on freestanding GaN (0001) substrates

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• 作者：Kun Zhou^a ; ^{zhoukun2011@sinano.ac.cn} ; Huaijin Ren^a ; Jianping Liu^b ; Masao Ikeda^b ; Yi Ma^a ; Songxin Gao^a ; Chun Tang^a ; Hui Yang^b
• 关键词：Surface morphology ; Metalorganic vapor phase epitaxy ; Free-standing GaN ; InGaN multiple quantum well ; Off-cut
• 刊名：Superlattices and Microstructures
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：100
• 期：Complete
• 页码：968-972
• 全文大小：2961 K
• 卷排序：100

文摘

The surface morphology of homoepitaxial GaN (0001) was studied. The surface morphology shows a dependence on the substrate crystallographic orientation. InGaN-based blue laser diode wafers were grown on substrates with off-cut towards the [11¯00]direction. The photoluminescence peak wavelength and spectra line width of laser diode show substrate off-cut angle dependence. An off-cut angle of around 0.5° towards the [11¯00] direction is a more optimized substrate parameter.