Epitaxial growth of single-crystalline silicon-germanium on silicon by aluminium-assisted crystallization

详细信息    查看全文

• 作者：Ziheng Liu ; Xiaojing Hao ; Fang Qi ; Anita Ho-Baillie ; Martin A. Green
• 关键词：Aluminium-assisted crystallization ; Sputtering ; Epitaxy growth ; Alloys ; Thin films
• 刊名：Scripta Materialia
• 出版年：15 January, 2014
• 年：2014
• 卷：71
• 期：Complete
• 页码：25-28
• 全文大小：594 K

文摘

Aluminium-assisted crystallization is used to grow single-crystalline Si_xGe_1鈭抶 film epitaxially on Si substrate at a relatively low temperature (350-450 掳C). Investigation of the mechanism by which Al film causes epitaxial growth of Si_xGe_1鈭抶 suggests a four-step growth process is involved. The composition of the Si_xGe_1鈭抶 film can be controlled by the annealing conditions. This Si_xGe_1鈭抶 film can be used as a buffer layer for the epitaxial growth of Ge on Si or as a virtual substrate for the fabrication of III-V devices.