ZnTiO3 is an attractive material for applications in microwave dielectrics and regarded as a good candidate for LTCCs.
Various parameters are optimized in order to achieve single phase ZnTiO3 thin film.
PLD is used for synthesis of single phase ZnTiO3 thin films and effect of phase transformation has been reported.
Band gap decreases as the substrate temp. increases from 300 to 400 oC, further increment in temp. increases band gap.
The dielectric constant of ZnTiO3 thin film increases as the substrate temperature increases.