Photoluminescence and excited state structure in Bi³⁺-doped Y₂SiO₅ single crystalline films

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• 作者：V. Babin ; V. Gorbenko ; A. Krasnikov ; E. Mihokova ; M. Nikl ; S. Zazubovich ; Yu. Zorenko
• 关键词：Luminescence ; Bi3+-doped oxyorthosilicates ; Single crystalline films
• 刊名：Radiation Measurements
• 出版年：2013
• 出版时间：September, 2013
• 年：2013
• 卷：56
• 期：Complete
• 页码：90-93
• 全文大小：431 K

文摘

Single crystalline films of Bi-doped Y₂SiO₅ are studied at 4.2-350?K by the time-resolved luminescence methods under excitation in the 3.8-6.2?eV energy range. Ultraviolet luminescence of Y₂SiO₅:Bi (¡Ö3.6?eV) is shown to arise from the radiative decay of the metastable and radiative minima of the triplet relaxed excited state (RES) of Bi³⁺ centers which are related to the ³P₀ and ³P₁ levels of a free Bi³⁺ ion, respectively. The lowest-energy excitation band of this emission, located at ¡Ö4.5?eV, is assigned to the ¹S₀?¡ú?³P₁ transitions of a free Bi³⁺ ion. The phenomenological model is proposed to describe the excited-state dynamics of Bi³⁺ centers in Y₂SiO₅:Bi, and parameters of the triplet RES are determined.