Comparison of GaN nanowires grown on c-, r- and m-plane sapphire substrates
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- 作者：Carina B. Maliakkal ; carina@tifr.res.in" class="auth_mail" title="E-mail the corresponding author ; A. Azizur Rahman ; Nirupam Hatui ; Bhagyashree A. Chalke ; Rudheer D. Bapat ; Arnab Bhattacharya
- 关键词：A1. Nanowire ; A3. Metalorganic chemical vapor deposition ; B1. Gallium nitride ; B1. Nanomaterials
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：1 April 2016
- 年：2016
- 卷：439
- 期：Complete
- 页码：47-53
- 全文大小：3724 K
文摘
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Comparison of Ni-catalysed GaN nanowires (NW) grown on c-, r-, and m-plane sapphire.
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Carrier gas, temperature, pressure and TMGa flow rate strongly impact NW growth.
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Narrow growth parameter space for thin, non-tapering GaN nanowires.
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NWs with triangular cross section grow along the 〈10−11〉 and 52b2203a94ac922b2bd7845cddf" title="Click to view the MathML source">〈10−10〉 axes.
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Near-band-edge PL show good crystal quality, Raman spectra show finite size effects.