Electronic structure of UV degradation defects in polysilanes studied by Energy Resolved

Electronic structure of UV degradation defects in polysilanes studied by Energy Resolved - Electrochemical Impedance Spectroscopy

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作者：F. Schauer^a ; ^b ; ^{fschauer@fai.utb.cz" class="auth_mail" title="E-mail the corresponding author} ; M. Tk&aacute ; čov&aacute ; ^c ; ^{miroslava.tkacova@stuba.sk" class="auth_mail" title="E-mail the corresponding author} ; V. Nad&aacute ; ždy^d ; ^{vojtech.nadazdy@savba.sk" class="auth_mail" title="E-mail the corresponding author} ; K. Gmucov&aacute ; ^d ; ^{katarina.gmucova@savba.sk" class="auth_mail" title="E-mail the corresponding author} ; M. Ožvoldov&aacute ; ^b ; L. Tk&aacute ; č^b ; ^{lukas.tkac@truni.sk" class="auth_mail" title="E-mail the corresponding author} ; J. Chlpí ; k^c ; ^{juraj.chlpik@stuba.sk" class="auth_mail" title="E-mail the corresponding author}
关键词：Polysilanes ; Poly[methyl(phenyl)silylene ; UV degradation ; Photochemical scission ; Crosslinking defects ; Bridging defects ; Electrochemical Impedance Spectroscopy
刊名：Polymer Degradation and Stability
出版年：2016
出版时间：April 2016
年：2016
卷：126
期：Complete
页码：204-208
全文大小：635 K

文摘

The white photo luminescence after UV degradation in long wavelength range 400–600 nm was examined on the prototypical polysilane, poly[methyl(phenyl)silane], using both photoluminescence spectroscopy and a new method of Energy Resolved - Electrochemical Impedance Spectroscopy (ER-EIS). Two groups of defect states, situated at approximately 440 nm (ΔE₁ = 2.8 eV with respect to electron transport energy) and 520 nm (ΔE₂ = 2.4 eV with respect to electron transport energy) were found by both spectroscopic methods. The white radiative recombination is ascribed to the recombination from trapping sites following the extreme energy migration. The forming of the crosslinking and bridging defects after photochemical scission of Si si<font color=