Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study

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• 作者：Y. El Gmili ; G. Orsal ; K. Pantzas ; T. Moudakir ; S. Sundaram ; G. Patriarche ; J. Hester ; A. Ahaitouf ; J.P. Salvestrini ; A. Ougazzaden
• 关键词：Semiconductor materials ; InGaN ; Multilayer design ; Deposition and fabrication ; Thin films
• 刊名：Acta Materialia
• 出版年：2013
• 出版时间：October, 2013
• 年：2013
• 卷：61
• 期：17
• 页码：6587-6596
• 全文大小：3189 K

文摘

We report a comparison of the morphological, structural and optical properties of both InGaN single-layer and multilayered structures, the latter consisting of periodic thin GaN interlayers inserted during InGaN growth. It is shown that such a structure suppresses the In concentration fluctuations and corresponding different states of strain relaxation with depth, both detrimental to solar cell applications. Measurements performed by X-ray diffraction, cathodoluminescence and photoluminescence demonstrate that this multilayer growth is a promising approach to increase both the InGaN layer total thickness and In content in InGaN epilayers. As an example, single-phase 120 nm thick InGaN with 14.3 % In content is obtained and found to possess high structural quality.