Polarity dependence of Mn incorporation in (Ga,Mn)N superlattices
详细信息 查看全文
- 作者：L. Tropfa ; lt44@st-andrews.ac.uk" class="auth_mail" title="E-mail the corresponding author ; G. Kunerta ; Gerd.Kunert@eitplus.pl" class="auth_mail" title="E-mail the corresponding author ; R. Jakiełab ; R.A. Wilhelmc ; S. Figgea ; J. Grenzerc ; D. Hommela ; d
- 关键词：A1. Doping ; A3. Molecular beam epitaxy ; B1. Nitrides ; B2. Magnetic materials
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：1 March 2016
- 年：2016
- 卷：437
- 期：Complete
- 页码：49-52
- 全文大小：1107 K
文摘
- •
Introducing (Ga,Mn)N/GaN:Mg superlattices for achieving high p-type and Mn doping.
- •
At high Mg fluxes, a drop in Mn concentrations of factor 100 to 1000 is observed.
- •
The drop is shown to be linked to a polarity inversion caused by high Mg fluxes.
- •
Comparison of Mg and Mn behaviour validates an analogy between underlying physics.