Nitrogen doped Cu₂O: A possible material for intermediate band solar cells?

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• 作者：Claudia Malerba ; Cristy Leonor Azanza Ricardo ; Mirco D'Incau ; Francesco Biccari ; Paolo Scardi ; Alberto Mittiga
• 关键词：Cu2O ; Cuprous oxide ; Nitrogen doping ; Intermediate band
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2012
• 出版时间：October, 2012
• 年：2012
• 卷：105
• 期：Complete
• 页码：192-195
• 全文大小：345 K

文摘

The optical properties of sputtered Cu₂O thin films doped with the nitrogen concentrations between 1 and 2.5 at % have been investigated by spectrophotometric measurements. All the doped samples exhibit two clearly defined absorption bands at energies below the gap, with an intensity well correlated with the N concentration. This result suggests Cu₂O as a promising material for the development of intermediate band solar cells, also considering the band gap of about 2 eV which is the optimal value for this kind of devices. Moreover, the sample with the highest doping shows a resistivity of , which is the lowest value ever reported for this semiconductor. As a collateral result, we provide a first estimation of the Relative Sensitivity Factors (RSF) of nitrogen and oxygen atoms under bombardment in a Cu₂O matrix.