Contribution of fixed oxide traps to sensitivity of pMOS dosimeters during gamma ray irradiation and annealing at room and elevated temperature

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• 作者：Milic M. Pejovic^a ; ^{milic.pejovic@elfak.ni.ac.rs}  ; [Author Vitae] ; Momcilo M. Pejovic^a  ; [Author Vitae] ; Aleksandar B. Jaksic^b  ; [Author Vitae]
• 关键词：Radiation sensitivity ; pMOS dosimeter ; Fading
• 刊名：Sensors and Actuators A: Physical
• 出版年：2012
• 出版时间：February 2012
• 年：2012
• 卷：174
• 期：Complete
• 页码：85-90
• 全文大小：333 K

文摘

Gamma-ray irradiation and post-irradiation response at room and elevated temperature of radiation sensitive p-channel MOS transistors have been studied. The response was observed on the basis of threshold voltage shift determined from transistors transfer characteristics. These characteristics together with charge-pumping characteristics proved to be useful in providing a detailed insight into the processes that occur during gamma-ray irradiation and subsequent annealing at room temperature and later at elevated temperature. In particular, the influence of fixed oxide traps, switching oxide traps (known as slow switching traps) and switching traps at interface (known as fast switching traps) on threshold voltage shift has been analyzed.