The influence of doping sites on achieving higher thermoelectric performance for nanostructured α-MgAgSb

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• 作者：Zihang Liu^a ; ^b ; Yumei Wang^a ; ^c ; Weihong Gao^a ; Jun Mao^b ; ^d ; Huiyuan Geng^e ; Jing Shuai^b ; Wei Cai^a ; Jiehe Sui^a ; ^{suijiehe@hit.edu.cn} ; Zhifeng Ren^b ; ^zren@uh.edu
• 关键词：Thermoelectric materials ; Doping site ; Nanostructured MgAgSb ; Nanotwin
• 刊名：Nano Energy
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：31
• 期：Complete
• 页码：194-200
• 全文大小：1975 K
• 卷排序：31

文摘

Doping on the Mg site leads to higher mobility and power factor in comparison with doping on Sb sub-lattice, originated from the less introduced perturbation to valence band upon doping. A peak ZT of ~1.3 at ~550 K and average ZT of ~1.1 between 300 K and 550 K are achieved by Ca doping on the Mg site.