Ion beam etching of high resolution structures in Ta₂O₅ for grating-assisted directional coupler applications

详细信息    查看全文

• 作者：Andreas Perentos ; Arnan Mitchell and Anthony Holland
• 关键词：Tantalum oxide Ta₂O₅ ; Ion beam etching IBE ; Grating-assisted directional coupler ; High resolution
• 刊名：Applied Surface Science
• 出版年：2005
• 出版时间：2005
• 年：2005
• 卷：252
• 期：4
• 页码：1006-1012
• 全文大小：379 K

文摘

An investigation on thin Ta₂O₅ films patterning using argon ion beam etching (IBE) is presented. The etch rates are characterised by varying the angle of incidence of the beam onto the substrate. Ta₂O₅ gratings with a period of 2.2 μm (1.1 μm linewidth) and 0.25 μm thickness are fabricated using an angle of incidence of 0°. The resulting Ta₂O₅ grating cross sectional profiles are analysed using AFM and SEM imaging. A fabrication method is thus demonstrated which could be used to implement wavelength selective gratings in applications such as grating-assisted directional couplers (GADCs).