The effect of Au and O implantation on the etch rate of CVD diamond

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• 作者：Leech ; Patrick W. ; Reeves ; Geoffrey K. ; Holland ; Anthony ; Ridgway ; Mark C.
• 关键词：Diamond films ; Ion implantation ; Etching ; Raman spectroscopy
• 刊名：Applied Surface Science
• 出版年：2004
• 出版时间：January 15, 2004
• 年：2004
• 卷：221
• 期：1-4
• 页码：302-307
• 全文大小：111 K

文摘

Diamond films were implanted with Au or O ions at multiple energies in order to produce a uniform region of C vacancies. Analysis of the implanted films by Raman spectroscopy has shown that the proportion of non-diamond or amorphous carbon increased with dose (5×10¹³ to 5×10¹⁵ions/cm²). For implantation with Au ions, a complete amorphization near to the surface was evident at a dose of 5×10¹⁵ions/cm². We have examined the ion beam etch (IBE) rate of the films as a function of the implant species and dose. The etching experiments were performed using either Ar or Ar/O₂ gases at a bias energy of 500–1000eV. In Ar gas, the process of sputter etching has produced a similar increase in etch rate with dose for both the Au and O implants. In Ar/O₂ gases, the process of ion-enhanced chemical etching produced greater etch rates than obtained in Ar gas with higher rates for the Au than the O implants.