Unraveling the resistive switching effect in ZnO/0.5Ba(Zrb>0.2b>Tib>0.8b>)Ob>3b>-0.5(Bab>0.7b>Cab>0.3b>)TiOb>3b> heterostructures

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• 作者：J.P.B. Silva^a ; ^b ; ^{josesilva@fisica.uminho.pt} ; M. Vorokhta^c ; F. Dvořá ; k^c ; K.C. Sekhar^a ; ^d ; V. Matolí ; n^c ; J. Agostinho Moreira^b ; M. Pereira^a ; M.J.M. Gomes^a
• 关键词：Resistive switching ; ZnO/0.5BZT-0.5BCT Heterojunction ; Charge coupling effect
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：1 April 2017
• 年：2017
• 卷：400
• 期：Complete
• 页码：453-460
• 全文大小：2472 K
• 卷排序：400

文摘

ZnO/0.5BZT-0.5BCT heterostructures exhibited resistive switching (RS) ratio ≥ 10 4. Effect of oxygen pressure used in the deposition of ZnO on RS ratio is highlighted. Determination of the Band alignment in ZnO/0.5BZT-0.5BCT heterojunctions from XPS. Resistive Switching is explained based on charge coupling effect.