Band-gap engineering of SnO2
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- 作者：O. Mounkachia ; o.mounkachi@mascir.com" class="auth_mail" title="E-mail the corresponding author ; kachiomar@gmail.com" class="auth_mail" title="E-mail the corresponding author ; E. Salmanib ; M. Lakhala ; b ; H. Ez-Zahraouyb ; M. Hamedouna ; M. Benaissab ; A. Karac ; A. Ennaouid ; A. Benyoussefa ; b
- 关键词：Semiconductors ; SnO2 ; Multilayer ; DFT ; Band-gap engineering
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2016
- 出版时间：April 2016
- 年：2016
- 卷：148
- 期：Complete
- 页码：34-38
- 全文大小：4084 K
文摘
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Band Gap Engineering of SnO2 thin film by Strain: a theoretical study.
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The tuning structure and band gap of SnO2 thin film were investigated.
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Theoretically The band-gap engineering is a powerful technique for the design of new semiconductor.