Realization of a graphene gate field effect transistor for electrochemical detection and biosensors
详细信息    查看全文
文摘

Graphene layers synthetized with high temperature annealing of 4H-SiC samples

Microstructuration of graphene to realize field effect transistors

Transistor drain current modulated with gate voltage

Detection limit obtained for electrochemical and bio-sensing

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700