Effect of boron incorporation on the structure and electrical properties of diamond-like carbon films deposited by femtosecond and nanosecond pulsed laser ablation
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- 作者：A. Sikora ; O. Bourgeois ; J.C. Sanchez-Lopez ; J.-N. Rouzaud ; T.C. Rojas ; A.-S. Loir ; J.-L. Garden ; F. Garrelie ; C. Donnet
- 关键词：Diamond-like carbon ; Pulsed laser deposition ; Boron ; Femtosecond ; Nanosecond ; EELS ; Electrical properties
- 刊名：Thin Solid Films
- 出版年：2009
- 出版时间：31 December 2009
- 年：2009
- 卷：518
- 期：5
- 页码：1470-1474
- 全文大小：490 K
文摘
The influence of the incorporation of boron in diamond-like carbon (DLC) films on the microstructure of the coatings has been investigated. The boron-containing DLC films (a-C:B) have been deposited by pulsed laser deposition (PLD) at room temperature in high vacuum conditions, by ablating graphite and boron targets either with a femtosecond pulsed laser (800 nm, 150 fs, fs-DLC) or with a nanosecond pulsed laser (248 nm, 20 ns, ns-DLC). Alternative ablation of the graphite and boron targets has been carried out to deposit the a-C:B films. The film structure and composition have been highlighted by coupling Field Emission Scanning Electron Microscopy, Electron Energy Loss Spectroscopy and High Resolution Transmission Electron Microscopy. Using the B K-edge, EELS characterization reveals the boron effect on the carbon bonding. Moreover, the plasmon energy reveals a tendency of graphitization associated to the boron doping. Pure boron particles have been characterized by HRTEM and reveal that those particles are amorphous or crystallized. The nanostructures of the boron-doped ns-DLC and the boron-doped fs-DLC are thus compared. In particular, the incorporation of boron in the DLC matrix is highlighted, depending on the laser used for deposition. Electrical measurements show that some of these films have potentialities to be used in low temperature thermometry, considering their conductivity and temperature coefficient of resistance (TCR) estimated within the temperature range 160–300 K.