Pulsed laser deposition BTS thin films: The role of substrate temperature

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• 作者：Shengtian Chen ; Shihui Yu ; Bowen Zhang ; Jieling Zhang ; Baogang Ma ; Qing Liu ; Weifeng Zhang ; ^{wfzhang6@163.com" class="auth_mail" title="E-mail the corresponding author} ; ^{wfzhang@henu.edu.cn" class="auth_mail" title="E-mail the corresponding author}
• 关键词：A. Films ; B. Grain size ; C. Dielectric properties ; E. Capacitors
• 刊名：Ceramics International
• 出版年：2016
• 出版时间：June 2016
• 年：2016
• 卷：42
• 期：8
• 页码：9341-9346
• 全文大小：1246 K

文摘

BaSn_0.15Ti_0.85O₃ (BTS) thin films were deposited on Pt/Ti/SiO₂/Si(1 0 0) substrate by pulsed laser deposition and the effects of substrate temperature on their structure, dielectric properties and leakage current density were investigated. The results indicate that the substrate temperature has a significant effect on the structural and dielectric properties of the BTS thin films which exhibit a polycrystalline perovskite structure if the substrate temperature ranges within 550–750 °C. The dielectric constant and loss tangent of the BTS thin films deposited at 650 °C are 341 and 0.009 at 1 MHz, respectively, the tunability is 72.1% at a dc bias field of 400 kV/cm, while the largest figure of merit (FOM) is 81.1. The effect of the substrate temperature on the leakage current of the BTS thin films is discussed.