Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40 nm floating gate embedded-flash memory

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• 作者：Adam Dobri^a ; ^b ; ^c ; ^{adam.dobri@st.com} ; Simon Jeannot^a ; Fausto Piazza^a ; Carine Jahan^b ; Jean Coignus^b ; Luca Perniola^b ; Francis Balestra^c
• 关键词：ONO ; Leakage current ; Flash memory ; Floating gate ; 40  ; nm embedded flash
• 刊名：Microelectronics Reliability
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：69
• 期：Complete
• 页码：47-51
• 全文大小：890 K
• 卷排序：69

文摘

New IGD characterisation method is proposed. OSS applied to state of the art e-NVM cell. Ultra-low (10− 23 A) leakage current measurement. Leakage current from floating gate on nominal flash memory cell