A gold-free fully copper metalized AlGaN/GaN power HEMTs on Si substrate

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• 作者：Hsien-Chin Chiu ; Chao-Wei Lin ; Hsuan-Ling Kao ; Geng-Yen Lee ; Jen-Inn Chyi ; Hao-Wei Chuang ; Kuo-Jen Chang ; Yau-Tang Gau
• 刊名：Microelectronics Reliability
• 出版年：2012
• 出版时间：November, 2012
• 年：2012
• 卷：52
• 期：11
• 页码：2556-2560
• 全文大小：1217 K

文摘

The thermal stability and reliability of AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrates with a 2-¦Ìm thick copper interconnection (Cu-INTC) were evaluated. The use of metallic copper as a conducting metal has the advantages of higher thermal conductivity, low cost and low sheet resistance. For comparison, traditional gold metal interconnection (Au-INTC) devices were fabricated under the same process conditions. Thermal infrared (IR) microscopy measurements show that the Cu-INTC devices could function at a lower channel temperature (T_CHANNEL) than traditional Au-INTC devices with the same drain current density, because of the low resistivity of the metal. The typical peak transconductance (g_m), output power (P_OUT), power gain (Gp) and power-added-efficiency (PAE) during operation at 100 ¡ãC were 87.53 mS/mm, 22.85 dBm, 11.1 dB and 25.9 % for a Cu-INTC power device with gate width of 1 mm and these measured results were better than those of Au-INTC devices. They indicate that the copper metal provides great potential for high-power AlGaN/GaN HEMT applications.