Electrical properties of metal–ferroelectric–insulator–semiconductor using sol–gel derived SrBi₂Ta₂O₉ film and ultra-thin Si₃N₄

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• 作者：Huang ; Chia-Hsing ; Tseng ; Tseung-Yuen ; Chien ; Chao-Hsin ; Yang ; Ming-Jui ; Leu ; Ching-Chich ; et. al.
• 关键词：SrBi₂Ta₂O₉ ; Metal&ndash ; ferroelectric&ndash ; insulator&ndash ; semiconductor ; SiN ; Data retention ; Fatigue ; Memory window
• 刊名：Thin Solid Films
• 出版年：2002
• 出版时间：December 2, 2002
• 年：2002
• 卷：420-421
• 期：Complete
• 页码：377-381
• 全文大小：972 K

文摘

The electrical properties of the metal–ferroelectric–insulator–silicon memories with stacked gate configuration of Pt/SrBi₂Ta₂O₉ (SBT)/Si₃N₄/p-Si (100) were investigated. In an attempt to operate at low voltage with sufficient large memory window, various ultra-thin Si₃N₄ buffer layers in thickness of 3.5, 2, and 0.9 nm were employed. From the results of C–V measurements, the memory window can be as large as 0.8 V at the bias amplitude of 5 V for the sample with 0.9 nm Si_xN_y buffer layer. Well-crystallized perovskite structures have been further confirmed by the spectra of X-ray diffraction measurements. The leakage current, which plays a very important role in the data retention, of Pt/SBT (245 nm)/Si₃N₄ (0.9 nm)/p-Si (100) can be as low as 2.5×10⁻⁸ A/cm² at 200 kV/cm. Excellent fatigue-free performance with up to 10¹⁰ read/write cycles and good retention time of >2 h have been obtained. Optimization and scaling of SBT thin films are believed to be effective in pursuing extremely low voltage operation, high-density and liable 1T nonvolatile ferroelectric random access memories.