Electrical and optical characterization of GaN-based light-emitting diodes fabricated with top-emission and flip-chip structures

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• 作者：Hyunsoo Kim^a ; ^{hskim7@jbnu.ac.kr} ; ^{hskim7@chonbuk.ac.kr} ; Sung-Nam Lee^b ; Jaehee Cho^c
• 关键词：GaN ; Light emitting diode ; Flip-chip ; Top-emission ; Forward voltage ; Light extraction
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2010
• 出版时间：September 2010
• 年：2010
• 卷：13
• 期：3
• 页码：180-184
• 全文大小：270 K

文摘

We investigated the electrical and optical characteristics of GaN-based light-emitting diodes (LEDs) fabricated with top-emission and flip-chip structures. Compared with top-emission LEDs, flip-chip LEDs exhibited a 0.25 V smaller forward voltage and an 8.7 Ω lower diode resistance. The light output power of the flip-chip LED was also larger than that of the top-emission LED by factors of 1.72 and 2.0 when measured before and after packaging, respectively. The improved electrical and optical output performances of flip-chip LEDs were quantitatively analyzed in terms of device resistance and ray optics, respectively.