Effect of ZnS interfacial passivation layer to CdS quantum dot-sensitized ZnO nanorods
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- 作者：Chunyan Zhou ; Qian Chen ; Guofang Wang ; Anxiang Guan ; Liya Zhou ; zhouliyatf@163.com" class="auth_mail" title="E-mail the corresponding author ; Ni Huang ; Jiehua Xu
- 关键词：ZnS interfacial passivation ; CdS quantum dots ; ZnO nanorods
- 刊名：Journal of Electroanalytical Chemistry
- 出版年：2016
- 出版时间：1 November 2016
- 年：2016
- 卷：780
- 期：Complete
- 页码：271-275
- 全文大小：1751 K
文摘
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The effect of ZnS layer was investigated in CdS QD-sensitized ZnO NRs.
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ZnS interfacial layer effectively passivates the surface trap states of ZnO NRs.
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ZnS layer suppresses recombination of injected electrons with holes on CdS QDs.
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The efficiency of 1.53% is increased by 300% compared with CdS/ZnO photoanode.