Electro-thermal analysis and optimization of edge termination of power diode supported by 2D numerical modeling and simulation

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• 作者：P. Pribytny ; ^{patrik.pribytny@stuba.sk} ; D. Donoval ; A. Chvala ; J. Marek ; M. Molnar
• 刊名：Microelectronics Reliability
• 出版年：2012
• 出版时间：March 2012
• 年：2012
• 卷：52
• 期：3
• 页码：463-468
• 全文大小：916 K

文摘

High reliability and performance of power semiconductor devices depend on an optimized design based on a good understanding of their electro-thermal behavior and of the influence of parasitic components on their operation. This leads to the need for electro-thermal 2/3-D numerical modeling and simulation in power electronics as an efficient tool for analysis and optimization of device structure design and identification of critical regions. In this paper we present an analysis and geometry optimization of a high power pin diode structure supported by advanced 2-D mixed mode electro-thermal device and circuit simulation. Lowering of the operation temperature by better power management and heat dissipation due to an optimized structure design will allow withstanding higher current pulses and suppressing the damage of the analyzed structure by thermal breakdown.