Surface engineering of ZnO electron transporting layer via Al doping for high efficiency planar perovskite solar cells
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- 作者：Zong-Liang Tsenga ; c ; Chien-Hung Chianga ; Sheng-Hsiung Changa ; Chun-Guey Wua ; b ; t610002@cc.ncu.edu.tw" class="auth_mail" title="E-mail the corresponding author
- 关键词：ZnO ; Surface modification ; AZO ; CH3NH3PbI3 ; Solar cell
- 刊名：Nano Energy
- 出版年：2016
- 出版时间：October 2016
- 年：2016
- 卷：28
- 期：Complete
- 页码：311-318
- 全文大小：2221 K
文摘
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Sputtered made, Al doped ZnO film can be applied as an electron transporting materials for high-efficiecny perovskite solar cell.
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The atmosphere of the sputtering chamber can be used to control the properties of the resulting Al doped ZnO film.
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The conductivity, acid resistance and band structure of the Al doped ZnO are key parameters effect the photovoltaic performance of the resulting cells.