Investigations of quantum efficiency in type-II InAs/GaSb very long wavelength infrared superlattice detectors
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- 作者：Xiaochao Li ; Dongwei Jiang ; Yong Zhang ; yongzhang@hit.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Gang Liu ; Dongbo Wang ; Qingjiang Yu ; Liancheng Zhao
- 关键词：InAs/GaSb superlattices ; Photodetector ; Quantum efficiency ; Hole diffusion length
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：April 2016
- 年：2016
- 卷：92
- 期：Complete
- 页码：330-336
- 全文大小：896 K
文摘
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The quantum efficiency of InAs/GaSb T2SL VLWIR photodetectors with 50% cutoff of 12.7 μm was investigated.
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The minority-carrier diffusion length was determined as the key element to improve the QE of VLWIR T2SL photodetectors.
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The short hole diffusion length and the large ratio to the width are against the photo-excited carrier collection.