Simulation of temperature field during nanoscale orthogonal cutting of single-crystal silicon by molecular statics method

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• 作者：Zone-Ching Lin ; Meng-Hua Lin ; Ying-Chih Hsu
• 关键词：Quasi-steady molecular statics ; Nanoscale orthogonal cutting ; Single-crystal silicon ; Temperature field
• 刊名：Computational Materials Science
• 出版年：January, 2014
• 年：2014
• 卷：81
• 期：Complete
• 页码：58-67
• 全文大小：1901 K

文摘

A quasi-steady molecular statics nanoscale cutting model is used to carry out simulation of nanoscale orthogonal cutting of single-crystal silicon by the diamond tools with different edge shapes. Based on the simulation results, this paper analyzes the cutting force, equivalent stress and strain, and temperature field. When the diamond tool moves to cut the single-crystal silicon, displacement of atoms is caused due to the effects of Morse force on each other. After a small distance that each atom moves, the concept of force balance is used to directly calculate the trajectory of each atom. Hooke-Jeeves direct search method is also used to solve the force balance equation, and obtain the new movement position of each atom. When chip formation and the cutting forces during cutting are calculated, further analysis is made. After the position of an atom鈥檚 displacement is acquired, the shape function concept of finite element is employed to obtain the atomic-level equivalent strain. The equivalent stress-strain curve of single-crystal silicon acquired from the reference is used to calculate the equivalent stress produced under the calculated equivalent strain. This paper further supposes that temperature rise during nanoscale orthogonal cutting the single-crystal silicon is mainly produced from two heat sources: plastic deformation heat and friction heat. Thus, this paper uses the acquired equivalent stress and strain to calculate plastic deformation heat. Besides, this paper additionally develops a method to calculate the numerical value of friction heat produced by the single-crystal silicon atoms on the tool face and the numerical value of temperature rise of silicon atoms around tool face. Finally, the temperature rise produced from the two heat sources is added up for calculation of temperature field of the single-crystal silicon workpiece during nanoscale orthogonal cutting, and for making analysis. A simulation temperature field result obtained by the proposed quasi-steady molecular statics nanocutting model is qualitatively verified with the temperature field obtained by molecular dynamics method in the reference.