The influence of recess depth and crystallographic orientation of seed sides on homoepitaxial growth of CVD single crystal diamonds
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- 作者：G. Wua ; b ; wugai1988@gmail.com" class="auth_mail" title="E-mail the corresponding author ; M.-H. Chena ; J. Liaoc
- 关键词：Microwave plasma CVD ; Single crystal diamond ; Substrate holder ; Crystallographic orientation ; Growth quality
- 刊名：Diamond & Related Materials
- 出版年：2016
- 出版时间：May 2016
- 年：2016
- 卷：65
- 期：Complete
- 页码：144-151
- 全文大小：1598 K
文摘
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Modified substrate holders are used to grow single-crystal diamond by MPCVD.
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Influence of recess depths on growth rate and quality is discussed.
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The side surface crystallographic orientation of the seed crystals is considered.
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A significant difference in growth mode and defect formation on edges is reported.