Optical centers and their depth distribution in electron irradiated CVD diamond

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• 作者：A.M. Zaitsev^a ; ^b ; ^{alexander.zaitsev@csi.cuny.edu} ; K.S. Moe^b ; W. Wang^b
• 关键词：CVD diamond ; Photoluminescence ; Electron irradiation ; Depth distribution ; Gamma irradiation ; Nitrogen aggregation
• 刊名：Diamond and Related Materials
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：71
• 期：Complete
• 页码：38-52
• 全文大小：2189 K
• 卷排序：71

文摘

In electron irradiated diamond, about 0.1% of defects is produced by gamma rays. Recombination of unstable defects considerably shortens radiation damaged layer. Low temperature stability of NV defects is due to their interaction with other defects. Direct formation of H3 defects of mobile NV defects is not probable. Optical centers with ZPLs 462.5/498.8 nm are a signature of commercial CVD diamonds.