An analysis of segregation during horizontal ribbon growth of silicon
详细信息 查看全文
- 作者：Parthiv Daggolu ; Andrew Yeckel ; Jeffrey J. Derby ; derby@umn.edu" class="auth_mail
- 关键词：A1. Computer simulation ; A1. Convection ; A1. Heat transfer ; A1. Segregation ; A2. Edge defined film fed growth ; B2. Semiconducting silicon
- 刊名：Journal of Crystal Growth
- 出版年：15 March 2014
- 年：2014
- 卷：390
- 期：Complete
- 页码：80-87
- 全文大小：2381 K
文摘
- •
Solute segregation is analyzed for the horizontal ribbon growth of silicon.
- •
The ribbon composition is inhomogeneous, with more solute in its lower portion.
- •
This inhomogeneous composition may be useful, acting to purify most of the ribbon.