Electronic and optical investigations of Be₂C monolayer: Under stress and strain conditions

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• 作者：Mosayeb Naseri^a ; ^{m.naseri@iauksh.ac.ir} ; Jaafar Jalilian^b
• 关键词：Density functional theory ; Monolayer ; Electronic properties ; Optical properties
• 刊名：Materials Research Bulletin
• 出版年：2017
• 出版时间：April 2017
• 年：2017
• 卷：88
• 期：Complete
• 页码：49-55
• 全文大小：2630 K
• 卷排序：88

文摘

The electronic and optical properties of Be2C monolayer under stress and strain are investigated. Be2C monolayer is a direct band gap semiconductor. By exerting stress, the energy band gap of the compound is reduced while the energy gap is increased when a strain is applied. The direct band gap of Be2C monolayer turns indirect when biaxial strains are applied. The optical calculations indicate the transparency of Be2C monolayer in low energy range.