The hydrostatic pressure and temperature effects on hydrogenic impurity binding energies in lattice matched InP/In_0.53Ga_0.47As/InP square quantum well

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• 作者：P. Başer^a ; ^{pbaser@cumhuriyet.edu.tr} ; S. Elagoz^b
• 关键词：Donor impurity binding energy ; Quantum-well ; Hydrostatic pressure ; Temperature effect
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：102
• 期：Complete
• 页码：173-179
• 全文大小：578 K
• 卷排序：102

文摘

The gs impurity binding energy decreases with the hydrostatic pressure which is just the opposite of GaAs/Al(In)GaAs systems. The binding energy dependency due to well width is found similar to the AlGaAs/GaAs/AlGaAs and GaAs/InGaAs/GaAs systems. The ground state binding energy is very stable for a temperature range of 0–300 K.