Characterization of chemically-deposited aluminum-doped CdS thin films with post-deposition thermal annealing
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文摘
Al-doped CdS thin films were synthesized by chemical bath deposition technique in an ammonia-free system. Surface roughness, Young's modulus and hardness decrease with increasing Al-doping. Thermal annealing modifies crystallite size and interplanar distance of the films. Electrical resistivity decreases with thermal annealing. Band gap increases with increasing Al-doping, but decreases with thermal annealing.

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