Formation of graphene/SiC/AlN multilayers synthesized by pulsed laser deposition on Si(110) substrates
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- 作者：S. Narita ; K. Meguro ; T. Takami ; Y. Enta ; H. Nakazawa ; hnaka@hirosaki-u.ac.jp
- 关键词：A3. Physical vapor deposition processes ; B1. Nanomaterials ; B2. Semiconducting aluminum compounds ; B2. Semiconducting silicon compounds
- 刊名：Journal of Crystal Growth
- 出版年：2017
- 出版时间：15 February 2017
- 年：2017
- 卷：460
- 期：Complete
- 页码：27-36
- 全文大小：3278 K
- 卷排序：460
文摘
A graphene layer is grown epitaxially on SiC/AlN/Si(110). AlN films are grown epitaxially on Si(110) substrate in a well-lattice-matched relationship. AlN films contain no rotation domains. A SiC film is grown on a SiC buffer layer, which gives rise to a 3C-SiC(111)3×3 surface.