Charge collection efficiency of an irradiated cryogenic double-p silicon detector

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• 作者：Borer ; K. ; Janos ; S. ; Li ; Z. ; Dezillie ; B. ; Da Viá ; C. ; Granata ; V. ; Casagrande ; L. ; de Boer ; R.W.I. ; et. al.
• 关键词：07.77.&minus ; n ; 85.30.z ; Cryogenic silicon detectors ; Lazarus effect
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：2001
• 出版时间：April 21, 2001
• 年：2001
• 卷：462
• 期：3
• 页码：474-483
• 全文大小：254 K

文摘

We present results on the measurement of the charge collection efficiency of a p⁺/n/p⁺ silicon detector irradiated to 1×10¹⁵n/cm², operated in the temperature range between 80 and 200K. For comparison, measurements obtained with a standard silicon diode (p⁺/n/n⁺), irradiated to the same fluence, are also presented. Both detectors show a dramatic increase of the CCE when operated at temperatures around 130K. The double-p detector shows a higher CCE regardless of the applied bias and temperature, besides being symmetric with respect to the polarity of the bias voltage. At 130K and 500V applied bias the double-p detector shows a CCE of 80 % , an unprecedented result for a silicon detector irradiated to such a high dose.