Formation and growth of stacking fault tetrahedra in Ni via vacancy aggregation mechanism

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• 作者：Dilpuneet S. Aidhy^a ; ^b ; ^{daidhy@uwyo.edu" class="auth_mail" title="E-mail the corresponding author} ; Chenyang Lu^c ; Ke Jin^b ; Hongbin Bei^b ; Yanwen Zhang^b ; Lumin Wang^c ; William J. Weber^b ; ^d
• 关键词：Molecular dynamics ; Diffusion ; Point defect ; Stacking fault tetrahedra
• 刊名：Scripta Materialia
• 出版年：2016
• 出版时间：15 March 2016
• 年：2016
• 卷：114
• 期：Complete
• 页码：137-141
• 全文大小：2137 K

文摘

Using molecular dynamics simulations, the formation and growth of stacking fault tetrahedra (SFT) are captured by vacancy cluster diffusion and aggregation mechanisms in Ni. The vacancy-tetrahedron acts as a nucleation point for SFT formation. Simulations show that perfect SFT can grow to the next size perfect SFT via a vacancy aggregation mechanism. The stopping and range of ions in matter (SRIM) calculations and transmission electron microscopy (TEM) observations reveal that SFT can form farther away from the initial cascade-event locations, indicating the operation of diffusion-based vacancy-aggregation mechanism.