Uniform resistive switching properties of fully transparent TiO₂-based memory devices

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• 作者：Lilan Zou^a ; ^{18312015139@163.com} ; Wei Hu^b ; Wei Xie^c ; Dinghua Bao^c ; ^{stsbdh@mail.sysu.edu.cn}
• 关键词：Resistive switching ; Transparent device ; TiO2 film ; Conductive mechanism
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：5 February 2017
• 年：2017
• 卷：693
• 期：Complete
• 页码：1180-1184
• 全文大小：1513 K
• 卷排序：693

文摘

A fully transparent TiO2-based memory device where the TiO2 thin film was prepared by chemical solution deposition method. Uniform resistive switching properties and high transparency of TiO2-based memory devices. A model of conductive filament to explain the resistive switching phenomenon.